Subpixel structure, pixel structure, and light emitting diode chip for the same

A subpixel structure, comprising:

• a substrate;
• and
• a light emitting diode chip disposed on the substrate,
• wherein the light emitting diode chip has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area,
• wherein the light emitting diode chip comprises:
• a first semiconductor layer having a first doping type;
• a light emitting layer disposed on the first semiconductor layer;
• a second semiconductor layer disposed on the light emitting layer and having a second doping type different from the first doping type;
• a first electrode contact electrically connected to the first semiconductor layer;
• and
• a second electrode contact electrically connected to the second semiconductor layer,
• wherein at least one of the first electrode contact and the second electrode contact is not overlapped with a light emitting region of the light emitting diode chip in a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer.

A pixel structure, comprising:

• a substrate;
• and
• a plurality of light emitting diode chips disposed on the substrate,
• wherein at least one of the plurality of light emitting diode chips has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area,
• wherein the pixel structure has a pixel area, the plurality of light emitting diode chips have a total light emitting area, and the total light emitting area is less than or equal to one thirtieth of the pixel area,
• wherein the at least one of the plurality of light emitting diode chips comprises:
• a first semiconductor layer having a first doping type;
• a light emitting layer disposed on the first semiconductor layer;
• a second semiconductor layer disposed on the light emitting layer and having a second doping type different from the first doping type;
• a first electrode contact electrically connected to the first semiconductor layer;
• and
• a second electrode contact electrically connected to the second semiconductor layer,
• wherein in at least one of the plurality of light emitting diode chips, at least one of the first electrode contact and the second electrode contact is not overlapped with a light emitting region of the light emitting diode chip in a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer.

A light emitting diode chip, comprising:

• a first semiconductor layer having a first doping type;
• a light emitting layer disposed on the first semiconductor layer;
• a second semiconductor layer disposed on the light emitting layer and having a second doping type different from the first doping type;
• a first electrode contact disposed under the first semiconductor layer and electrically connected to the first semiconductor layer;
• a second electrode contact disposed under the second semiconductor layer and electrically connected to the second semiconductor layer;
• and
• a light shielding layer disposed on the second semiconductor layer and exposing a light emitting region of the light emitting diode chip, wherein at least one of the first electrode contact and the second electrode contact is not overlapped with the light emitting region of the light emitting diode chip in a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer.