Highly efficient micro led in low current range, method of fabricating the same, and display including the same

A method of fabricating a micro light-emitting diode (LED), comprising:

• preparing a first conductive type semiconductor layer;
• stacking, on the first conductive type semiconductor layer, an active layer having a single quantum well structure;
• and
• stacking a second conductive type semiconductor layer on the active layer,
• wherein the single quantum well structure is formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.

A display comprising:

• an integrated circuit device in which a driving circuit is wired;
• and
• a plurality of micro light-emitting diodes (LEDs) mounted on one surface of the integrated circuit device,
• wherein each of the micro LEDs comprises:
• a first conductive type semiconductor layer and a second conductive type semiconductor layer;
• and
• an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure,
• wherein the single quantum well structure is formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of another of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.