Multi-Junction Pico-Avalanche Detector

Multi-junction photon detector comprising

• a silicon substrate presenting a drift region in the bulk (1),
• a plurality of pixels (2) on the top surface of the silicon substrate,
• a uniform doping implant (3) on the backside surface of the substrate and
• at least one deep implant layer (4) on the backside, deeper in the substrate bulk than the uniform doping implant,
• such that the detector presents a first junction in inverse polarization, corresponding to the interface between the pixels (2) and the drift region in the substrate (1), and
• a second PN junction in inverse polarization between the deep implant layer (4) and the uniform doping implant (3) on the backside surface forming a gain region,
• wherein both the plurality of pixels (2) and the uniform doping implant (3) function as end terminals, with the drift region (1) and the deep implant layer (4) interposed in between, so as to be able to direct a current signal between them through the drift region (1) and the deep implant layer (4).