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US 2021/0280722 A1Published application
Strained silicon transistor
AssigneeQUALCOMM Incorporated
InventorsHaining YANG, Bin YANG, Xia LI
Life of this patent
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Abstract
Strained silicon transistor, such as GAA transistors, allow for both good PMOS mobility and NMOS mobility on the same substrate. In one example, a GAA circuit may include a NMOS device on a tensile strained Si channel and a PMOS device on a compressive strained SiGe channel. In another example, a GAA circuit may include a NMOS device on a strained Si channel and a PMOS device on a relaxed SiGe channel on (110) crystalline substrate.
Claims30
A transistor circuit comprising:
- a first transistor comprising a silicon channel;
- and
- a second transistor comprising a silicon germanium channel.
A transistor circuit comprising:
- first means for amplifying or switching comprising a silicon channel;
- and
- second means for amplifying or switching comprising a silicon germanium channel.
A transistor circuit comprising:
- a NMOS transistor comprising a silicon channel;
- and
- a PMOS transistor comprising a silicon germanium channel.
A method of manufacturing a transistor circuit, the method comprising:
- providing a substrate;
- forming a plurality of alternative epitaxial layers of silicon and silicon germanium;
- forming a shallow trench insolation region;
- forming a dummy gate;
- depositing a gate spacer;
- etching the gate spacer;
- etching a PMOS region;
- etching the silicon germanium layers to form recessed regions;
- forming a plurality of spacers in the recessed regions;
- forming a source region and a drain region for the PMOS region;
- forming a NMOS spacer;
- and
- forming a source region and a drain region for an NMOS region.
10 more elements
Dependencies are inferred from the claim text.