Ferroelectric thin-film structure and electronic device including the same

An electronic device comprising:

• a semiconductor substrate including a first channel region, a first source and a first drain each connected to the first channel region, a second channel region, and a second source and a second drain each connected to the second channel region;
• a first transistor including the first channel region, the first source, the first drain, a first ferroelectric layer on the first channel region, and a first gate electrode on the first ferroelectric layer;
• and
• a second transistor including the second channel region, the second source, the second drain, a second ferroelectric layer on the second channel region, and a second gate electrode on the second ferroelectric layer, a dielectric constant of the second ferroelectric layer being different than a dielectric constant of the first ferroelectric layer.

A ferroelectric thin-film structure comprising:

• a semiconductor substrate;
• and
• a first ferroelectric layer and a second ferroelectric layer spaced apart from each other on the semiconductor substrate,
• the first ferroelectric layer and the second ferroelectric layer each including a plurality of first atomic layers and a plurality of second atomic layers stacked on each other,
• a material of the plurality of first atomic layers being different than a material of the plurality of second atomic layers, and
• the second ferroelectric layer further including one or more third atomic layers having a dopant.