US 2021/0280718 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.

Claims29

Dependent claims

A semiconductor device comprising a first oxide, first to third insulators, first to third conductors, and first and second oxide insulators,

wherein the first conductor is over the first oxide,
wherein the second conductor and the third conductor are over the first oxide with the first conductor therebetween,
wherein the first oxide insulator is over the second conductor,
wherein the second oxide insulator is over the third conductor,
wherein the first insulator is between the first conductor and the first oxide,
wherein the second insulator is between the second conductor and the first oxide insulator,
wherein the third insulator is between the third conductor and the second oxide insulator, and
wherein the first oxide insulator and the second oxide insulator are in contact with none of the first to third conductors and the first oxide.

5 more elements

A semiconductor device comprising a first oxide, first to fourth insulators, first to third conductors, and first and second oxide insulators,

wherein the first conductor is over the first oxide,
wherein the second conductor and the third conductor are over the first oxide with the first conductor therebetween,
wherein the first oxide insulator is over the second conductor,
wherein the second oxide insulator is over the third conductor,
wherein the first insulator is between the first conductor and the first oxide,
wherein a part of the first conductor and a part of the first insulator overlap with a part of the first oxide insulator and a part of the second oxide insulator,
wherein the second insulator is in contact with a top surface and a side surface of the second conductor and a side surface of the first oxide,
wherein the third insulator is in contact with a top surface and a side surface of the third conductor and the side surface of the first oxide, and
wherein the fourth insulator is over the first oxide insulator, the second oxide insulator, and the first conductor.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Abstract

Claims29