US 2021/0280717 A1 · METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Abstract

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Claims6

Dependent claims

A method of forming a semiconductor device, comprising:

providing a substrate;
forming a gate structure on the substrate;
and
forming an epitaxial structure in the substrate, at one side of the gate structure, the epitaxial structure comprising a portion being protruding from a top surface of the substrate, the portion comprising a discontinuous sidewall, wherein a distance between a turning point on the discontinuous sidewall and the gate structure is a maximum distance between the epitaxial structure and the gate structure.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

17/330,443Filed 26 May 2021

Priority

CN 201811267020.X29 Oct 2018

Published

9 Sep 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10D 30/797
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: being in source or drain regions, e.g. SiGe source or drain
H10D 30/0223
Of FETs having insulated gates [IGFET]: having source and drain regions or source and drain extensions self-aligned to sides of the gate
H10D 30/0227
Having source and drain regions or source and drain extensions self-aligned to sides of the gate: having both lightly-doped source and drain…
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]

Method of fabricating semiconductor device

Life of this patent

Method of fabricating semiconductor device

Life of this patent

Abstract

Claims6