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US 2021/0280710 A1Published application
Device of dielectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Yun PENG, Keng-Chu LIN
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Abstract
A device includes a semiconductive substrate, a fin structure, and an isolation material. The fin structure extends from the semiconductive substrate. The isolation material is over the semiconductive substrate and adjacent to the fin structure, wherein the isolation material includes a first metal element, a second metal element, and oxide.
Claims20
A device comprising:
- a semiconductive substrate;
- a fin structure extending from the semiconductive substrate;
- and
- an isolation material over the semiconductive substrate and adjacent to the fin structure, wherein the isolation material comprises a first metal element, a second metal element, and oxide.
1 more element
A device comprising:
- a semiconductive substrate;
- a gate structure over the semiconductive substrate;
- an interlayer dielectric (ILD) layer over the semiconductive substrate and surrounding the gate structure;
- and
- a dielectric liner layer between the semiconductive substrate and the ILD layer, wherein the dielectric liner layer comprises a metal element, silicon, and oxide in a form of solid solution or metastable phase.
2 more elements
A device comprising:
- first and second source/drain features;
- a gate structure between the first and second source/drain features;
- an interlayer dielectric (ILD) layer over the first and second source/drain features;
- and
- a dielectric liner layer between the gate structure and the ILD layer, wherein the ILD layer and the dielectric liner layer comprise a same first metal element.
2 more elements
Dependencies are inferred from the claim text.