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US 2021/0280705 A1Published application
High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
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Abstract
A high electron mobility transistor, including an active area, a buffer layer on the active area, a channel layer on the buffer layer, a barrier layer on the channel layer, and gate, source and drain on the barrier layer, and a trench isolation structure adjacent and surrounding the channel layer and the barrier layer to apply stress and modify two-dimension hole gas (2DHG) of the high electron mobility transistor.
Claims7
A high electron mobility transistor structure, comprising at least one high electron mobility transistor, and each said high electron mobility transistor comprises:
- a substrate with an active area;
- a buffer layer on said active area;
- a channel layer on said buffer layer;
- a barrier layer on said channel layer;
- gate, source and drain on said barrier layer;
- and
- a trench isolation structure adjacent and surrounding said channel layer and said barrier layer to apply stress on said channel layer and said barrier layer and change two-dimension hole gas (2DHG) of said high electron mobility transistor.
4 more elements
Dependencies are inferred from the claim text.