AND Gate Based on Ballistic Electrons

An AND-gate device comprising:

• an epitaxial layer forming a channel, and includes a III-N heterostructure such as InAlN/GaN, wherein an amount of an In concentration of the InAlN/GaN is tuned to lattice match with GaN, resulting in electron mobility to generate ballistic electrons;
• at least two structures positioned in series in the channel, such that at an end of the channel includes an ohmic contact Y, wherein the ohmic contact Y serves as an output terminal to detect a conductance state for the two structures, wherein each structure includes
• a fin structure located in the channel and includes
• a gate formed transversely to a longitudinal axis of the channel, and the gate is controlled using a voltage over the fin structure, such that the fin structure is formed to induce an energy-field structure that is shifted by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to interference;
• and
• at least one sensor located at the end of the channel,
• wherein the AND-gate device is turned on by applying an amount of the voltage, and turned off by applying no amounts of the voltage.

An AND-gate device having a first arm, a second arm and a third arm, such that a channel from the first and second arms extends to a channel of the third arm, and when a current from a first voltage is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons are generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel, comprising:

• at least two structures are positioned in series in the third arm channel, each structure includes a fin structure located in the third arm, wherein the fin structure includes
• a gate formed transversely to a longitudinal axis of the fin structure, and is controlled using an individual voltage applied to an electrode of the fin structure, wherein the fin structure is formed to induce an electric-field structure that is shifted by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through;
• and
• at least one sensor is positioned at an end of the third arm,
• wherein the AND-gate device is turned on by applying an amount of voltage to both electrodes of the at least two fin structures, and turned off by applying no amounts of voltage to either of the electrodes of the at least two fin structures.

An AND-gate device comprising:

• a structure having a first arm, a second arm and a third arm, such that a channel from the first and second arms extends to a channel of the third arm, and when a current from a first voltage is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons are generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel, wherein the first voltage and second voltage are connected to a same ground terminal;
• at least two input structures are positioned in series in the third arm channel, each input structure includes a fin structure located in the third arm, wherein the fin structure includes
• a gate formed transversely to a longitudinal axis of the fin structure, and is controlled using an individual voltage applied to an electrode of the fin structure, wherein the fin structure is formed to induce an electric-field structure that is shifted by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through;
• and
• at least one sensor is positioned at an end of the third arm, and is configured to operationally detect an amount of conductance within a range of a 10−2 S amount of conductance to a 103 S amount of conductance,
• wherein the AND-gate device is turned on by applying an amount of voltage to both electrodes of the at least two fin structures, and turned off by applying no amounts of voltage to either of the electrodes of the at least two fin structures.

An AND-gate device including a structure having a first arm, a second arm, a third arm and fourth arm, such that a channel from the first and second arms extends to a channel of the third arm, and when a current from a first voltage is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons are generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel, wherein the first voltage and second voltage are connected to a same ground terminal, wherein the fourth arm is position to extend along a vertical axis above the second arm, comprising:

• at least two input structures are positioned in series in the third arm, such that each input structure includes a fin structure located in the third arm, wherein the fin structure includes
• a gate formed transversely to a longitudinal axis of the fin structure, and is controlled using an individual voltage applied to an electrode of the fin structure, wherein the fin structure is formed to induce an electric-field structure that is shifted by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through;
• and
• at least one sensor is positioned at an end of the third arm, such that as voltage is applied to the electrodes of the at least two input structures, the at least one sensor detects ballistic electrons so as to detect an amount of conductance,
• wherein the AND-gate device is turned on by applying an amount of voltage to both electrodes of the at least two fin structures, and turned off by applying no amounts of voltage to either of the electrodes of the at least two fin structures.