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US 2021/0280703 A1Published application
Charge-trapping layers for iii-v semiconductor devices
AssigneeGlobalFoundries U.S. Inc.
InventorsBartlomiej J. Pawlak, Dimitri Lederer
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Abstract
Structures including a buffer layer and methods of forming a structure including a buffer layer. A layer stack is formed on a semiconductor substrate. The layer stack includes a buffer layer and a charge-trapping layer. The buffer layer is composed of a III-V compound semiconductor material, and the charge-trapping layer is positioned between the semiconductor substrate and the buffer layer.
Claims20
A structure comprising:
- a semiconductor substrate;
- and
- a layer stack on the semiconductor substrate, the layer stack including a buffer layer and a first charge-trapping layer, the buffer layer comprised of a III-V compound semiconductor material, and the first charge-trapping layer positioned between the semiconductor substrate and the buffer layer.
A method comprising:
- forming a charge-trapping layer on a semiconductor substrate;
- and
- forming a buffer layer on the charge-trapping layer,
- wherein the buffer layer is comprised of a III-V compound semiconductor material, and the charge-trapping layer is positioned between the semiconductor substrate and the buffer layer.
1 more element
Dependencies are inferred from the claim text.