GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

A method of forming a gallium nitride (GaN)-based transistor, comprising:

• forming a GaN layer on a substrate;
• forming an aluminum nitride gallium (AlGaN) layer over the GaN layer;
• forming a p-doped GaN structure over the AlGaN layer;
• forming a source contact structure over the AlGaN layer;
• forming a first drain contact structure over the AlGaN layer;
• and
• forming multiple p-doped GaN blocks over the AlGaN layer and located between the p-doped GaN structure and the first drain contact structure, each of the multiple p-doped GaN blocks physically separated from the remaining multiple p-doped GaN blocks,
• wherein first and second contours of a two-dimensional electron gas (2DEG) of the GaN-based transistor are at an interface of the AlGaN and GaN layers.

A method of forming a transistor, comprising:

• forming a GaN layer supported over a substrate;
• forming an aluminum nitride gallium (AlGaN) layer over the GaN layer;
• forming a p-doped GaN structure over the AlGaN layer;
• forming a source contact structure over the AlGaN layer;
• forming a drain contact structure over the multiple p-doped GaN blocks;
• forming a gate contact structure over the p-doped GaN structure;
• and
• forming multiple p-doped GaN blocks supported over the AlGaN layer, each of the multiple p-doped GaN blocks physically separated from the remaining multiple p-doped GaN blocks, wherein a linear portion of the drain contact structure overlies the multiple p-doped GaN blocks,
• wherein first and second contours of a two-dimensional electron gas (2DEG) of the GaN-based transistor are at an interface of the AlGaN and GaN layers.

A method, comprising:

• forming a GaN layer over a substrate;
• forming an aluminum nitride gallium (AlGaN) layer over the AlGaN layer;
• forming a p-doped GaN layer over the AlGaN layer;
• forming a gate contact structure on the p-doped GaN layer;
• forming a first drain contact structure on the AlGaN layer;
• forming multiple p-doped GaN blocks over the AlGaN layer, wherein the multiple p-doped GaN blocks are located between the p-doped GaN layer and a same linear portion of the first drain contact structure;
• forming multiple second drain contact structures, each of the multiple second drain contact structures physically separated from the remaining second drain contact structures, and each of the multiple second drain contact structures is disposed on a different one of the multiple p-doped GaN blocks, wherein each of the multiple second drain contact structures conductively couples to the first drain contact structure;
• and
• forming a source contact structure disposed on the AlGaN layer.