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US 2021/0280699 A1Published application
Diode triggered compact silicon controlled rectifier
AssigneeGlobalFoundries U.S. Inc.
InventorsAnindya NATH, Alain F. LOISEAU
Life of this patent
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Abstract
The present disclosure relates to a polysilicon-diode triggered compact silicon controlled rectifier. In particular, the present disclosure relates to a structure including a silicon controlled rectifier (SCR) which includes an n-well adjacent and in direct contact with a p-well, the SCR includes at least one shallow trench isolation (STI) region, and at least one polysilicon diode on top of the at least one STI region.
Claims20
A structure, comprising:
- a silicon controlled rectifier (SCR) which comprises an n-well adjacent and in contact with a p-well, wherein the SCR comprises at least one shallow trench isolation (STI) region;
- and
- at least one polysilicon diode on top of the at least one STI region.
A structure, comprising:
- a silicon controlled rectifier (SCR) which comprises a PNP transistor and a NPN transistor in series;
- and
- at least one polysilicon diode connected to the PNP transistor and the NPN transistor.
A structure, comprising:
- a silicon controlled rectifier (SCR) which comprises a PNP transistor and a NPN transistor in series;
- and
- at least one polysilicon bipolar device connected to the PNP transistor and the NPN transistor.
Dependencies are inferred from the claim text.