US 2021/0280690 A1 · USING SELECTIVELY FORMED CAP LAYERS TO FORM SELF-ALIGNED CONTACTS TO SOURCE/DRAIN REGIONS

Abstract

A method for manufacturing a semiconductor device includes forming a plurality of gate structures on a semiconductor fin, and forming a plurality of source/drain regions adjacent the plurality of gate structures. In the method, a germanium oxide layer is formed on the plurality of gate structures and on the plurality of source/drain regions, and portions of the germanium oxide layer on the plurality of source/drain regions are converted into a plurality of dielectric layers. The method also includes removing unconverted portions of the germanium oxide layer from the plurality of gate structures, and depositing a plurality of cap layers in place of the removed unconverted portions of the germanium oxide layer. The plurality of dielectric layers are removed, and a plurality of source/drain contacts are formed on the plurality of source/drain regions. The plurality of source/drain contacts are adjacent the plurality of cap layers.

Claims22

Dependent claims

-11. (canceled)

Dependencies are inferred from the claim text.

Facts

Application

16/810,114Filed 5 Mar 2020

Published

9 Sep 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10D 30/6219
Fin field-effect transistors [FinFET]: characterised by the source or drain electrodes
H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 64/256
Source or drain electrodes for field-effect devices: for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
H10D 64/258
Source or drain electrodes for field-effect devices: characterised by the relative positions of the source or drain electrodes with respect to the…

Using selectively formed cap layers to form self-aligned contacts to source/drain regions

Life of this patent

Using selectively formed cap layers to form self-aligned contacts to source/drain regions

Life of this patent

Abstract

Claims22