Transistor with insulator

A transistor comprising:

• a first channel surrounded by a first metal;
• a second channel proximate to and spaced from the first channel, the second channel surrounded by a second metal;
• a gate dielectric between the first channel and the first metal and between the second channel and the second metal;
• means for insulating between the first metal and the second metal, wherein the means for insulating is an air gap enclosed by a dielectric;
• a gate on a substrate, the gate encapsulates the first metal, the second metal, and the means for insulating;
• a source on the substrate proximate the gate;
• and
• a drain on the substrate proximate the gate.

A method for manufacturing a transistor, the comprising:

• providing a substrate;
• forming a source on the substrate;
• forming a drain on the substrate proximate the source;
• forming a first channel surrounded by a first metal proximate the substrate;
• forming a second channel proximate to and spaced from the first channel, the second channel surrounded by a second metal;
• forming a gate dielectric between the first channel and the first metal and between the second channel and the second metal;
• forming a first insulator between the first metal and the second metal, wherein the first insulator is an air gap enclosed by a dielectric;
• and
• forming a gate on the substrate, the gate encapsulates the first metal, the second metal, and the first insulator.