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US 2021/0280679 A1Published application
Semiconductor device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ming LIN, Peng-Soon LIM, Zi-Wei FANG
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Abstract
A semiconductor device includes a substrate, a semiconductor fin extending from the substrate, a gate dielectric layer over the semiconductor fin, a metal nitride layer comprising a first portion over the gate dielectric layer and a second portion over the first portion, and a fill metal over the metal nitride layer. The second portion has an aluminum concentration greater than an aluminum concentration of the first portion.
Claims20
A device comprising:
- a substrate;
- a semiconductor fin extending from the substrate;
- a gate dielectric layer over the semiconductor fin;
- a metal nitride layer comprising a first portion over the gate dielectric layer and a second portion over the first portion, the second portion having an aluminum concentration greater than an aluminum concentration of the first portion;
- and
- a fill metal over the metal nitride layer.
3 more elements
A device comprising:
- a semiconductor fin protruding above a substrate;
- a gate dielectric layer over the semiconductor fin;
- a first work function layer over the gate dielectric layer, an upper portion of the first work function layer having a silicon concentration greater than a silicon concentration of a lower portion of the first work function layer;
- and
- a second work function layer over the first work function layer and having a work function lower than a work function of the first work function layer.
2 more elements
A device comprising:
- a semiconductor fin over a substrate;
- a gate dielectric layer over the semiconductor fin;
- a p-type work function layer over the gate dielectric layer, an upper portion of the p-type work function layer being doped with aluminum;
- and
- an n-type work function layer over the aluminum-doped upper portion of the p-type work function layer.
2 more elements
Dependencies are inferred from the claim text.