US 2021/0280678 A1 · GREYSCALE LITHOGRAPHY FOR DOUBLE-SLANTED GATE CONNECTED FIELD PLATE

Abstract

Methods for manufacturing double-slanted gate connected field plates that allow for the simultaneous optimization of electric field distributions between gate and drain terminals and gate and source terminals are described. A technical benefit of manufacturing the double-slanted gate connected field plate using greyscale lithography is that fabrication costs may be substantially reduced by reducing the number of process steps required to form the double-slanted gate connected field plate. The source-side slope and the drain-side slope of the double-slanted gate connected field plate may be concurrently formed with two different slopes or two different step profiles.

Claims6

Dependent claims

A method for fabricating a double-slanted gate connected field plate using greyscale lithography, comprising:

depositing a passivation layer above a substrate;
depositing a layer of photoresist above the passivation layer;
defining a slanted photoresist profile for the layer of photoresist using a greyscale mask, the slanted photoresist profile includes a first slope associated with a source-side slope of the double-slanted gate connected field plate and a second slope associated with a drain-side slope of the double-slanted gate connected field plate;
etching a portion of the passivation layer to transfer the slanted photoresist profile from the layer of photoresist to the passivation layer;
and
depositing a metal stack within the etched portion of the passivation layer to form the double-slanted gate connected field plate.

3 more elements

Dependencies are inferred from the claim text.

Greyscale lithography for double-slanted gate connected field plate

Life of this patent

Greyscale lithography for double-slanted gate connected field plate

Life of this patent

Abstract

Claims6