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US 2021/0280677 A1Published application
SiC WAFER AND MANUFACTURING METHOD THEREOF
AssigneeHitachi Metals, Ltd.
InventorsKeisuke KOBAYASHI, Akio SHIMA
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Abstract
A SiC wafer including a SiC substrate and an epitaxial layer formed on the SiC substrate and containing SiC is provided, and a composition ratio of C—Si of an upper surface of the epitaxial layer is 50 atm % or less.
Claims15
A SiC wafer comprising:
- a SiC substrate;
- and
- an epitaxial layer formed on the SiC substrate and containing SiC,
- wherein a composition ratio of C—Si of an upper surface of the epitaxial layer is 50 atm % or less.
1 more element
A SiC wafer comprising:
- a SiC substrate;
- and
- an epitaxial layer formed on the SiC substrate and containing SiC,
- wherein a composition ratio of C—Si of an upper surface of the epitaxial layer is 83 atm % or less.
1 more element
A manufacturing method of a SiC wafer comprising:
- (a) preparing a SiC substrate;
- (b) forming an epitaxial layer containing SiC on the SiC substrate;
- and
- (c) modifying a composition of an upper surface of the epitaxial layer, thereby setting a composition ratio of C—Si of the upper surface of the epitaxial layer to 50 atm % or less.
1 more element
Dependencies are inferred from the claim text.