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US 2021/0280676 A1Published application
Quantum dot devices
AssigneesIntel Corporation, Technishce Universiteit Delft
InventorsKanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
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Abstract
Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
Claims20
A quantum dot device, comprising:
- a quantum well stack;
- a plurality of first gate lines above the quantum well stack;
- a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines;
- and
- an array of regularly spaced conductive lines.
2 more elements
A quantum computing device, comprising:
- a quantum processing device, wherein the quantum processing device includes a quantum well stack including a quantum well layer, a plurality of gates above the quantum well layer, and a plurality of conductive lines of a non-magnetic material;
- a non-quantum processing device, coupled to the quantum processing device, to control electrical signals applied to the plurality of conductive lines;
- and
- a memory device to store data generated during operation of the quantum processing device.
1 more element
A method of operating a quantum dot device, the method comprising:
- applying voltages to first gate lines and second gate lines of a quantum dot device to form a quantum dot in a quantum well stack of the quantum dot device, wherein the first gate lines are oriented perpendicular to the second gate lines;
- and
- applying electric signals to an array of regularly spaced conductive lines to generate a magnetic field as part of causing a quantum state of the quantum dot to change.
Dependencies are inferred from the claim text.