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US 2021/0280670 A1Published application
Nanowire structure enhanced for stack deposition
AssigneesMurata Manufacturing Co., Ltd., Commissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJulien El Sabahy, Frédéric Voiron, Paul-Henri Haumesser, Pierre Noe, Guy Parat
Life of this patent
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Abstract
A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.
Claims15
A structure, comprising:
- a first conductive layer;
- first conductive wires having first ends that contact the first conductive layer and second ends that protrude from the first conductive layer;
- a first lateral bridge layer that connects laterally a number of the first conductive wires to provide a substantially uniform spacing between the first conductive wires, wherein the first lateral bridge layer comprises a capping layer that caps the second ends of at least some of the first conductive wires, the capping layer being of a different material than the first conductive wires;
- and
- an electrode-insulator-electrode stack or an insulator-electrode stack that coats the first conductive wires and the capping layer.
2 more elements
A method of manufacturing an electronic product, the method comprising:
- forming an anodic etch stop layer on a substrate;
- forming an anodizable layer on the anodic etch stop layer;
- anodizing the anodizable layer to form an anodic oxide region having pores;
- forming, inside pores of the anodic oxide region, conductive wires having first ends that contact the anodic etch stop layer and second ends that protrude from the anodic etch stop layer;
- forming a lateral bridge layer that connects laterally a number of the conductive wires, wherein forming the lateral bridge layer comprises forming, on a top surface of the anodic oxide region, a capping layer that caps the second ends of at least some of the conductive wires, the capping layer being of a different material than the conductive wires;
- selectively dissolving the anodic oxide region;
- and
- forming an electrode-insulator-electrode stack or an insulator-electrode stack on the conductive wires and the capping layer.
5 more elements
Dependencies are inferred from the claim text.