Array substrate and manufacturing method of same
AssigneeWuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorsCheng CHEN, Yun YU
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Abstract
The present application provides an array substrate and a manufacturing method of the same, the array substrate includes a display region, the display region includes a thin film transistor structure layer including a gate electrode layer and a source drain electrode layer, wherein the gate electrode layer and the source drain electrode layer are made of an alloy material including one or a group selected from Al, Ge, Nd, Ta, Zr, Ni, or La.
Claims10
An array substrate comprising a display region, wherein the display region comprises:
- a thin film transistor structure layer comprising a gate electrode layer and a source drain electrode layer, wherein the gate electrode layer and the source drain electrode layer are made of an alloy material comprising one or a group selected from Al, Ge, Nd, Ta, Zr, Ni, or La.
A manufacturing method of an array substrate, wherein the array substrate comprises a display region, and further comprises a non-display region surrounding the display region, the non-display region comprises a binding region and a fan out region disposed between the binding region and the display region, the display region comprises a main display region and an auxiliary region disposed between the main display region and the fan out region, the fan out region is disposed between the display region and the binding region, wherein the method comprises:
- a step S1) of forming a thin film transistor structure layer, wherein the thin film transistor structure layer comprising a gate electrode layer and a source drain electrode layer, wherein the gate electrode layer and the source drain electrode layer are made of an alloy material comprising one or a group selected from Al, Ge, Nd, Ta, Zr, Ni, or La.
Dependencies are inferred from the claim text.