Photoelectric conversion element

A photoelectric conversion element, comprising:

• a first electrode and a second electrode arranged to face each other;
• and
• a photoelectric conversion layer provided between the first electrode and the second electrode, wherein
• the photoelectric conversion layer is formed of two or more kinds of organic semiconductor materials, and
• m/n is 1 or more, where m is a film density of the photoelectric conversion layer, and n is a weighted average of the film density of a single film of each organic semiconductor material forming the photoelectric conversion layer with respect to a composition.

A photoelectric conversion element, comprising:

• a first electrode and a second electrode arranged to face each other;
• and
• a photoelectric conversion layer provided between the first electrode and the second electrode, wherein
• the photoelectric conversion layer includes first to third organic semiconductor materials, and
• a ratio of the second organic semiconductor material, which has only a most stable structure as a coordination structure with the third organic semiconductor material adjacent to the second organic semiconductor material, is 0.5 or more.

A photoelectric conversion element, comprising:

• a first electrode and a second electrode arranged to face each other;
• and
• a photoelectric conversion layer provided between the first electrode and the second electrode, wherein
• the photoelectric conversion layer includes first, second, and third organic semiconductor materials, and
• the photoelectric conversion layer has a first domain formed of the first organic semiconductor material and a second domain in which the second organic semiconductor material and the third organic semiconductor material are uniformly dissolved at a molecular level.

A photoelectric conversion element, comprising:

• a first electrode and a second electrode arranged to face each other;
• and
• a photoelectric conversion layer provided between the first electrode and the second electrode, wherein
• the photoelectric conversion layer is formed of two or more kinds of organic semiconductor materials including at least fullerenes, and
• a value of an energy gap of fullerene in the photoelectric conversion layer measured by ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy is 2.6 eV or more.