Imaging element, stacked imaging element, and solid-state imaging device

Abstract

[Subject] An imaging element has at least a photoelectric conversion section, a first transistor TR1, and a second transistor TR2, the photoelectric conversion section includes a photoelectric conversion layer 13, a first electrode 11, and a second electrode 12, the imaging element further has a first photoelectric conversion layer extension section 13A, a third electrode 51, and a fourth electrode 51C, the first transistor TR1 includes the second electrode 12 that functions as one source/drain section, the third electrode that functions as a gate section 51, and the first photoelectric conversion layer extension section 13A that functions as the other source/drain section, and the first transistor TR1 (TRrst) is provided adjacent to the photoelectric conversion section.

Dependencies are inferred from the claim text.