Solid-state imaging apparatus and electronic apparatus

Abstract

Providing a SPAD photodiode that accurately captures a subject regardless of long distance or short distance. A solid-state imaging apparatus (1000) according to the present disclosure includes: a pixel isolator (100) that defines a photoelectric conversion region (200) for each pixel; a first semiconductor layer (106) provided in the photoelectric conversion region; and a second semiconductor layer (108) to which a voltage for electron multiplication is applied, specifically between the first semiconductor layer and the second semiconductor layer, in which the sensitivities of the plurality of pixels are varied. With this configuration, it is possible to accurately capture a subject in the SPAD photodiode regardless of long distance or short distance.

Dependencies are inferred from the claim text.