Semiconductor device and display device

A semiconductor device comprising:

• gate electrode;
• a gate insulating film overlapping the gate electrode;
• a semiconductor film provided on the upper surface of the gate insulating film and overlapping the gate electrode;
• and
• a first terminal and a second terminal overlapping the upper surface of the semiconductor film;
• wherein
• the gate insulating film has a first thickness region and a second thickness region thinner than the first film thickness region,
• in a plan view, a first region is a region in which the semiconductor film overlaps the first film thickness region and a third region is a region in which the semiconductor film overlaps the second thickness region, and
• the first region is provided between the first terminal and the third region in a plan view.

A display device comprising:

• pixel having a light emitting element and a first transistor electrically connected to the light emitting element;
• the first transistor having
• a gate electrode,
• the first gate insulating film that overlaps a part of the side surface and the upper surface of the gate electrode,
• a second gate insulating film that overlaps a part of the upper surface of the gate electrode,
• a semiconductor film provided on the upper surface of the second gate insulating film and overlapping the gate electrode, and
• the first terminal and the second terminal that overlap the upper surface of the semiconductor film,
• wherein,
• in a plan view, between the first terminal and the second terminal,
• a first region is a region in which the semiconductor film overlaps the upper surface of the first gate insulating film and the second gate insulating film, and a third region is a region in which the semiconductor film overlaps a part of the upper surface of the gate electrode and the second insulating film and does not overlap the first gate insulating film, and
• the first region is provided between the first terminal and the third region in a plan view.