Three-dimensional vertical nor flash thin-film transistor strings
AssigneeSunrise Memory Corporation
InventorsEli Harari, Tianhong Yan
Life of this patent
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Abstract
A memory structure, includes active columns of polysilicon formed above a semiconductor substrate, each active column includes one or more vertical NOR strings, with each NOR string having thin-film storage transistors sharing a local source line and a local bit line, the local bit line is connected by one segment of a segmented global bit line to a sense amplifier provided in the semiconductor substrate.
Claims41
(canceled)
A thin-film NOR memory string formed above a planar surface of a semiconductor substrate, the semiconductor substrate including circuitry formed therein or thereon for supporting memory circuit operations, comprising:
- a common source region and a common drain region each extending lengthwise along a first direction substantially perpendicular to the planar surface;
- a plurality of channel regions, each being provided between and in contact with both the common drain region and the common source region;
- a plurality of regions of charge-trapping material each provided associated with and in contact with a respective one of the channel regions;
- and
- a plurality of gate electrodes that are spaced apart from each other and insulated from each other by a dielectric material, each gate electrode being positioned to be adjacent one of the channel regions, separated from that channel region by the associated region of charge-trapping material, each gate electrode extending lengthwise along a second direction substantially parallel the planar surface.
Dependencies are inferred from the claim text.