Semiconductor memory device and method for manufacturing same

A semiconductor memory device, comprising:

• a semiconductor substrate;
• a transistor provided on the semiconductor substrate;
• a first interconnection layer provided above the transistor, the first interconnection layer including a first interconnection and a second interconnection, the first interconnection being electrically connected to the semiconductor substrate, the second interconnection being electrically connected to the transistor;
• a first conductive layer provided above the first interconnection layer;
• a stacked body provided above the first conductive layer and including a plurality of electrode layers stacked in a first direction;
• a semiconductor member extending through the stacked body in the first direction and connected to the first conductive layer;
• a charge storage member provided between the plurality of electrode layers and the semiconductor member;
• a first via provided between the first conductive layer and the first interconnection and connected to the first conductive layer and the first interconnection;
• and
• a second via extending though the stacked body and the first conductive layer and connected to the second interconnection.