Integrated Assemblies Having Vertically-Spaced Channel Material Segments, and Methods of Forming Integrated Assemblies

A method of forming an integrated structure, comprising:

• forming a vertical stack of alternating first and second levels;
• the first levels comprising first material, and the second levels comprising second material;
• recessing the first levels relative to the second levels;
• the second levels having projecting terminal ends extending beyond the recessed first levels;
• the terminal ends having surfaces of the second material;
• the recessed first levels having surfaces of the first material;
• forming third material along the second material selectively relative to the first material;
• the third material extending around the terminal ends of the second levels to widen the terminal ends;
• the widened terminal ends being vertically spaced from one another by gaps;
• forming fourth material within the gaps;
• the third and fourth materials having outer surfaces that form a vertical edge;
• inner surfaces of the fourth material being adjacent the surfaces of the first material;
• forming charge-storage material extending vertically along the vertical edge;
• forming gate-dielectric material extending vertically along the charge-storage material;
• forming channel material extending vertically along the gate-dielectric material;
• removing the second and third materials to leave first voids;
• forming conductive levels within the first voids;
• the conductive levels having primary regions of a first vertical thickness, and having terminal projections of a second vertical thickness which is greater than the first vertical thickness;
• removing the first and fourth materials to leave second voids;
• and
• extending the second voids through the charge-storage material to divide the charge-storage material into vertically-spaced segments.