Semiconductor storage device
AssigneeKioxia Corporation
InventorTadashi IGUCHI
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Abstract
A semiconductor storage device includes: a substrate having a front surface; a plurality of conductive layers arranged in a first direction, the first direction intersecting the front surface of the substrate; a plurality of memory cells connected to the plurality of conductive layers; a contact electrode extending in the first direction and connected to one of the plurality of conductive layers; and an insulating structure extending in the first direction, the insulating structure connected to an end portion of the contact electrode on one side of the contact electrode in the first direction, and penetrating the plurality of conductive layers.
Claims15
A semiconductor storage device, comprising:
- a substrate having a surface;
- a plurality of conductive layers arranged in a first direction, the first direction intersecting the surface of the substrate;
- a plurality of memory cells connected to the plurality of conductive layers;
- a contact electrode extending in the first direction and connected to one of the plurality of conductive layers;
- and
- an insulator extending in the first direction, the insulator connected to an end portion of the contact electrode on one side of the contact electrode in the first direction, and the insulator connected to the plurality of conductive layers.
Dependencies are inferred from the claim text.