Three dimensional memory device
AssigneeMacronix International Co., Ltd.
InventorsChien-Lan CHIU, Chun-Min CHENG
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Abstract
A three-dimensional memory device includes a plurality of conductive layers and insulating layers alternately formed to define a multi-layer stacked structure on a first region of a semiconductor substrate. The multi-layer stacked structure includes a stair structure and a non-stair structure. A plurality of memory structures are located in the non-stair structure to form a memory array region, and each memory structure passes through the conductive layers and the insulating layers. A plurality of bow-height adjustment features are located in a second region of the semiconductor substrate.
Claims20
A three-dimensional (3D) memory device, comprising:
- a plurality of conductive layers and insulating layers alternately formed to define a multi-layer stacked structure on a first region of a semiconductor substrate, wherein the multi-layer stacked structure comprises a stair structure and a non-stair structure;
- a plurality of memory structures disposed in the non-stair structure to form a memory array region, and each memory structure passing through the conductive layers and the insulating layers;
- and
- a plurality of bow-height adjustment features disposed in a second region of the semiconductor substrate.
A three-dimensional (3D) memory device, comprising:
- a plurality of conductive layers and insulating layers alternately formed to define a multi-layer stacked structure on a first region of a semiconductor substrate;
- a plurality of memory structures each passing through the conductive layers and the insulating layers;
- a second region, wherein the first region and the second region are adjacent to each other and disposed on a same side of the semiconductor substrate;
- and
- a plurality of bow-height adjustment features disposed in a third region of the semiconductor substrate disposed on a side of the semiconductor substrate that is opposite to the side on which the first and second regions are disposed.
Dependencies are inferred from the claim text.