US 2021/0280589 A1 · NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

A non-volatile memory device and its manufacturing method are provided. The non-volatile memory device includes a substrate and a plurality of first gate structures and a plurality of second gate structures formed on the substrate. The substrate includes a center region and two border regions located on opposite sides of the center region. The center region and two border regions are located in an array region. The first gate structures are located in the center region, and the second gate structures are located in one of the border regions. Each of the first gate structures has a first width, and each of the second gate structures has a second width less than the first width. There is a first spacing between the first gate structures, and there is a second spacing which is greater than the first spacing between the second gate structures.

Claims14

Dependent claims

A non-volatile memory device, comprising:

a substrate comprising a center region and two border regions located in an array region, wherein the border regions are located outside the center region;
and
a plurality of memory cells located in the array region, wherein the memory cells comprise:
a plurality of first gate structures formed on the substrate and located in the center region, wherein each of the first gate structures has a first width, and there is a first spacing between two of the first gate structures;
and
a plurality of second gate structures formed on the substrate and located in one of the border regions, wherein each of the second gate structures has a second width smaller than the first width, and there is a second spacing between two of the second gate structures, and wherein the second spacing is greater than the first spacing.

3 more elements

A method for manufacturing a non-volatile memory device, comprising:

defining a center region and two border regions of an array region on a substrate, wherein the border regions are located outside the center region;
and
forming a plurality of memory cells located in the array region, the plurality of memory cells comprising:
forming a plurality of first gate structures in the center region of the substrate, wherein each of the first gate structures has a first width, and there is a first spacing between two of the first gate structures;
and
forming a plurality of second gate structures in one of the border regions of the substrate, wherein each of the second gate structures has a second width smaller than the first width, and there is a second spacing between two of the second gate structures, and wherein the second spacing is greater than the first spacing.

3 more elements

Dependencies are inferred from the claim text.

Non-volatile memory device and method for manufacturing the same

Life of this patent

Non-volatile memory device and method for manufacturing the same

Life of this patent

Abstract

Claims14