Semiconductor structure and formation method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorFei ZHOU
Life of this patent
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Abstract
A semiconductor structure and a fabrication method of the semiconductor structure are provided in the present disclosure. The semiconductor structure includes a substrate, including a first region, a second region, and a third region between the first region and the second region; a first channel pillar on the first region and a second channel pillar on the second region; a first work function layer on the first region of the substrate and on a sidewall surface of the first channel pillar; and a second work function layer on the second region of the substrate and on a sidewall surface of the second channel pillar.
Claims19
A semiconductor structure, comprising:
- a substrate, including a first region, a second region, and a third region between the first region and the second region;
- a first channel pillar on the first region and a second channel pillar on the second region;
- a first work function layer on the first region of the substrate and on a sidewall surface of the first channel pillar;
- and
- a second work function layer on the second region of the substrate and on a sidewall surface of the second channel pillar.
A method for fabricating a semiconductor structure, comprising:
- providing a substrate, including a first region, a second region, and a third region between the first region and the second region;
- forming a first channel pillar on the first region and a second channel pillar on the second region;
- forming a first work function layer on the first region of the substrate and on a sidewall surface of the first channel pillar;
- and
- forming a second work function layer on the second region of the substrate and on a sidewall surface of the second channel pillar.
Dependencies are inferred from the claim text.