Semiconductor Device and Manufacturing Method Thereof

A semiconductor device, comprising:

• a semiconductor substrate;
• a first fin and a second fin extending from the semiconductor substrate;
• a gate on the first and second fins;
• a first epitaxy source/drain structure extending from the first fin and a second epitaxy source/drain structure extending from the second fin, the first epitaxy source/drain structure comprising a first inner side corner, the second epitaxy source/drain structure comprising a second inner side corner, the first inner side corner facing the second inner side corner;
• and
• a cap structure on the first and second inner side corners, the cap structure having an hourglass shape in a cross-sectional view.

A semiconductor device, comprising:

• a semiconductor substrate;
• a first fin and a second fin extending from the semiconductor substrate;
• a gate on the first and second fins;
• a first epitaxy structure extending from the first fin and a second epitaxy structure extending from the second fin, the first epitaxy structure comprising a first inner side corner, the second epitaxy structure comprising a second inner side corner, the first inner side corner facing the second inner side corner;
• and
• a cap structure covering the first and second inner side corners, the cap structure having a top portion, a middle portion, and a bottom portion, the top portion being above the first and second inner side corners, the bottom portion being below the first and second inner side corners, the middle portion being between the top and bottom portions, the middle portion being narrower than the top and bottom portions.