Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChan-Hong CHERN
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChan-Hong CHERN
Estimating the term…
Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an active layer that is formed over the substrate and comprises a plurality of active portions; a polarization modulation layer comprising a plurality of polarization modulation portions each of which is disposed on a corresponding one of the plurality of active portions; and a plurality of transistors each of which comprises a source region, a drain region, and a gate structure formed on a corresponding one of the plurality of polarization modulation portions. The transistors have at least three different threshold voltages.
A structure, comprising:
A circuit, comprising:
A method, comprising:
Dependencies are inferred from the claim text.