Semiconductor device

Abstract

An object of the present disclosure is to provide a semiconductor device capable of lowering the threshold voltage without deteriorating the RBSOA tolerance and manufacturing variation. According to the present disclosure, the semiconductor device includes a drift layer of a first conductivity type, a carrier store layer of the first conductivity type, a base layer of a second conductivity type, an emitter layer of the first conductivity type provided on the first main surface side of the base layer, an active trench provided so as to extend through the emitter layer, the base layer, and the carrier store layer and reach the drift layer, a gate insulating film, a gate electrode, and a collector layer of the second conductivity type provided on a second main surface side of the drift layer, in which peak concentration of impurities in the base layer is 1.0E17 cm−3 or higher.

Dependencies are inferred from the claim text.