Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device, the method comprising:

• forming an element isolation region so as to surround a forming region for a p-n junction diode configuring a protected element in an active layer of a substrate including the active layer formed over a substrate-support with an insulation layer interposed between the active layer and the substrate-support, and of forming an anode region in the active layer such that a periphery of the anode region is surrounded by the element isolation region;
• forming a cathode region having an opposite conductivity type to the anode region of the p-n junction diode on a portion on the main face of the anode region so as to form the p-n junction diode;
• forming a contact region set with the same conductivity type as the anode region and set with a higher impurity concentration than the anode region on a different portion on the main face of the anode region to the portion formed with the cathode region;
• forming wiring having one end portion connected to the contact region and another end portion extending over the p-n junction diode with a passivation film between the p-n junction diode and the wiring;
• and
• forming a channel stopper region under the wiring at a portion on the main face of the anode region between the contact region and the element isolation region, such that the channel stopper region has the same conductivity type as the cathode region and is formed in the same process as the process of forming the cathode region.