Semiconductor device including fractured semiconductor dies

A semiconductor device, comprising:

• a first semiconductor die, comprising:
• a first substrate,
• a first group of die bond pads in the first substrate, the first group of die bond pads configured to transfer electrical signals to and from the first semiconductor die, and
• first integrated circuits in the first substrate, the first integrated circuits electrically coupled to the first group of die bond pads;
• wherein the first semiconductor die comprises fractured blocks at an edge of the first semiconductor die;
• a second semiconductor die, comprising:
• a second substrate,
• a second group of die bond pads in the second substrate, the second group of die bond pads configured to transfer electrical signals to and from the second semiconductor die, and
• second integrated circuits in the second substrate, the second integrated circuits electrically coupled to the second group of die bond pads;
• wherein the second semiconductor die comprises a pair of popped traces at an edge of the second semiconductor die to clear an electrical short between the pair of popped traces.

A semiconductor die, comprising:

• a substrate;
• die bond pads, in the substrate, the die bond pads configured to transfer electrical signals to and from the semiconductor die;
• a memory cell array in the substrate, the memory cell array comprising bit lines electrically coupled to the die bond pads;
• wherein the semiconductor die is fractured to a size smaller than an original size of the semiconductor die;
• and
• means for clearing electrical shorts between bit lines which contact each other upon fracturing of the semiconductor die.