Crack suppression structure for hv isolation component

An integrated circuit (IC), comprising:

• a substrate having functional circuitry for realizing at least one circuit function with at least one high voltage isolation component including a top metal feature above the substrate;
• a first metal interconnect level, at least one second metal interconnect level over the first metal interconnect level, and a third metal interconnect level over the at least one second metal interconnect level, the third metal interconnect level including the top metal feature;
• a crack suppressing dielectric structure comprising at least one crack resistant dielectric layer on the top metal feature;
• a dielectric passivation overcoat (PO) layer over the top metal feature.

An integrated circuit (IC), comprising:

• a lower metal interconnect level over a substrate, the lower metal interconnect level including a bottom capacitor plate of a capacitor;
• two or more intermediate metal interconnect levels over the lower metal interconnect level;
• a metal interconnect layer of a top metal interconnect level over the two or more intermediate metal interconnect levels;
• a top capacitor plate of the capacitor located in the metal interconnect layer;
• a crack suppressing dielectric structure on the metal interconnect layer, the crack suppressing dielectric structure comprising at least one dielectric layer of silicon nitride (SiN) or silicon carbide (SiC);
• and
• a dielectric passivation overcoat (PO) layer on the crack suppressing dielectric structure that touches both the PO layer and the top capacitor plate.