Semiconductor structure

A system in package (SiP) comprising:

• a molding;
• a device disposed in the molding;
• a pair of metallic shields disposed within the molding and at two sides of the device;
• and
• a redistribution layer (RDL) disposed over the device and the molding,
• wherein the RDL comprises a first portion directly over the molding, a second portion directly over the device, a bottom surface of the first portion is in contact with a surface of the molding, a bottom surface of the second portion is in contact with a surface of the device, the bottom surface of the first portion of the RDL and the bottom surface of the second portion of the RDL are at different levels and misaligned from each other, and a thickness of the first portion is greater than a thickness of the second portion.

A semiconductor structure, comprising:

• a metallic layer;
• a molding disposed over the metallic layer;
• a device surrounded by the molding;
• a pair of metallic shields disposed within the molding and at two sides of the device, wherein the pair of metallic shields is in contact with the metallic layer;
• and
• a redistribution layer (RDL) disposed over the molding, the device and the pair of metallic shields,
• wherein the RDL comprises a first portion directly over the molding, a second portion directly over the plurality of the devices, a bottom surface of the first portion is in contact with a surface of the molding, a bottom surface of the second portion is in contact with a surface of the device, the bottom surface of the first portion of the RDL and the bottom surface of the second portion of the RDL are at different levels and misaligned from each other, and a thickness of the first portion is greater than a thickness of the second portion.