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US 2021/0280526 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorToshiyuki MORITA
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Abstract
A semiconductor device according to an embodiment includes: a semiconductor substrate having a diffusion region including an impurity; and a contact provided on the diffusion region. The contact includes a metal film, a barrier metal film covering the metal film, and a conductive film provided between the barrier metal film and the diffusion region and including a conductive material having a higher heat of formation than a heat of formation of the barrier metal film.
Claims11
A semiconductor device comprising:
- a semiconductor substrate having a diffusion region including an impurity;
- and
- a contact provided on the diffusion region, wherein
- the contact includes
- a metal film;
- a barrier metal film covering the metal film, and
- a conductive film provided between the barrier metal film and the diffusion region and including a conductive material having a higher heat of formation than a heat of formation of the barrier metal film.
4 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a hole penetrating an interlayer insulating film covering a semiconductor substrate;
- forming a diffusion region including an impurity on a surface, of the semiconductor substrate, that is exposed from the hole;
- and
- forming a contact in the hole, the contact including a metal film, a barrier metal film covering the metal film, and a conductive film provided between the barrier metal film and the diffusion region and including a conductive material having a higher heat of formation than a heat of formation of the barrier metal film.
1 more element
Dependencies are inferred from the claim text.