Semiconductor die, manufacturing method thereof, and semiconductor package

A semiconductor package, comprising:

• a first semiconductor die, comprising:
• a semiconductor substrate;
• an interconnection structure disposed on the semiconductor substrate;
• conductive pads disposed beside each other on the interconnection structure;
• and
• a composite passivation structure covering the conductive pads, comprising:
• a first passivation layer conformally disposed over the conductive pads;
• and
• a second passivation layer disposed on the first passivation layer, wherein the second passivation layer has a first section and second sections located between two adjacent conductive pads, an extending direction of the first section is substantially parallel to a top surface of the interconnection structure, one of the second sections faces a side surface of one of the two adjacent conductive pads, and another one of the second sections faces a side surface of another one of the two adjacent conductive pads, and a thickness of the first section is smaller than a thickness of the second sections;
• and
• a second semiconductor die disposed on and electrically connected to the first semiconductor die.

A manufacturing method of a semiconductor die, comprising:

• providing a semiconductor wafer having an interconnection structure and conductive pads;
• performing a first chemical vapor deposition process to form a first passivation layer conformally covering the conductive pads;
• performing a high-density plasma chemical vapor deposition process to form a second passivation layer on the first passivation layer, wherein a thickness of the second passivation layer is non-uniform;
• performing a second chemical vapor deposition process to form a third passivation layer on the second passivation layer;
• and
• forming a bonding layer on the third passivation layer.