Power semiconductor apparatus

A power semiconductor apparatus, comprising:

• a power semiconductor element having a low potential side electrode, a high potential side electrode, and a sense electrode;
• a high potential side conductor electrically connected with the high potential side electrode;
• a low potential side conductor electrically connected with the low potential side electrode;
• a sense wiring electrically connected with the sense electrode;
• and
• a first metal portion facing the low potential side conductor or the low potential side conductor across the sense wiring,
• wherein when viewed from an array direction of the sense wiring and the first metal portion,
• the sense wiring has a facing portion facing the high potential side conductor or the low potential side conductor,
• the first metal portion forms a recess in a part overlapping the facing portion, and
• a depth of the recess is formed such that a distance between a bottom of the recess and the sense wiring is larger than a distance between the sense wiring and the high potential side conductor or the low potential side conductor.