Semiconductor structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSUNG-LI WANG, PENG-WEI CHU, YASUTOSHI OKUNO
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Abstract
A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the first silicide comprising a first metal and a second metal, and the second silicide is on the second epitaxy region. A work function of the first silicide is greater than a work function of the second silicide.
Claims20
A semiconductor structure, comprising:
- a substrate having a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type;
- a first silicide on the first epitaxy region, the first silicide comprising a first metal and a second metal;
- and
- a second silicide on the second epitaxy region,
- wherein a work function of the first silicide is greater than a work function of the second silicide.
A semiconductor structure, comprising:
- a substrate having a first epitaxy region in a first transistor and a second epitaxy region in a second transistor, the first epitaxy region having a first germanium concentration greater than 50%;
- a first silicide on the first epitaxy region, the first silicide comprising a first metal and a second metal;
- and
- a second silicide on the second epitaxy region,
- wherein a work function of the first silicide is greater than a work function of the second silicide.
A method for manufacturing a semiconductor structure, comprising:
- receiving a substrate having a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type, wherein the first epitaxy region has a first germanium concentration greater than 50%;
- introducing an agent directly onto the first epitaxy region and the second epitaxy region, wherein the agent is selectively deposited on the second epitaxy region;
- selectively depositing a first metal layer on the first epitaxy region;
- and
- depositing a second metal layer on the first epitaxy region and the second epitaxy region.
Dependencies are inferred from the claim text.