3d ic method and device

A method of integrating a first element having a first contact structure with a second element having a second contact structure, the first element having a via and a first conductive material in the via, the first conductive material connected to the first contact structure, the method comprising:

• removing a portion of the first element to expose the first conductive material in the via;
• and
• bonding the first element to the second element such that one of the first contact structure and the first conductive material is directly connected to the second contact structure,
• wherein the via and the first conductive material are formed before forming the first contact structure.

A method of integrating a first element with a second element, wherein the first element includes a first contact structure and a conductive material formed in a via formed in the first element and connected to the first contact structure, and the second element includes a second contact structure, the method comprising:

• bonding a material in the first element to a material in the second element such that the first contact structure is directly connected to the second contact structure;
• and
• heating the first and second elements at a temperature less than 400° C. to increase the pressure between the first and second contact structures,
• wherein the first and second contact structures comprise a metal selected from copper, tungsten, nickel, gold or alloys thereof.

A method of bonding a first element with a second element, the method comprising:

• contacting a first non-metallic region of the first element with a second non-metallic region of the second element, wherein a gap is disposed between a first contact structure formed in the first element and a second contact structure formed in the second element;
• directly bonding the first non-metallic region of the first element to the second non-metallic region of the second element;
• and
• heating the first element and the second element to form a direct bond between the first contact structure and the second contact structure without melting or reflowing the first contact structure or the second contact structure.

A method for forming a bonded structure comprising:

• providing a first element, the first element having a first semiconductor substrate having a front side and a back side opposite the front side, the first semiconductor substrate comprising a first contact structure comprising a conductive material filled in a via extending through the first semiconductor substrate, and a first nonconductive region located on the front side of the substrate proximate to the first contact structure, the first nonconductive region at least partially defining a front surface of the first element, the first nonconductive region comprising an inorganic dielectric material, providing a second element having a second semiconductor substrate comprising a second contact structure and a second nonconductive region located on a contact surface of the second element proximate to the second contact structure;
• contacting the front surface of the first element and the contact surface of the second element;
• directly bonding the first contact structure and the second contact structure;
• and
• directly bonding the first nonconductive region and the second nonconductive region without an intervening adhesive.