Self-aligned block via patterning for dual damascene double patterned metal lines

A method comprising:

• forming a via pattern in a first hard mask comprised of a first material;
• transferring the via pattern into a second hard mask that is directly beneath the first hard mask, wherein the second hard mask is comprised of a second material, wherein the first material and the second material are different materials;
• transferring the via pattern into a dielectric layer that is directly beneath the second hard mask;
• removing the first hard mask and removing the second hard mask to expose the via pattern in the dielectric layer;
• and
• filling the via pattern with a conductive metal:
• wherein the second hard mask is formed directly on the top surface of the dielectric layer, wherein the first hard mask is formed directly on top of the second hard mask.