Method of manufacturing semiconductor devices

A method for manufacturing a semiconductor device, the method comprising:

• forming a first opening in an underlying layer disposed over a substrate;
• forming a sacrificial layer on an inner wall of the first opening by a directional deposition method;
• expanding an upper part of the first opening in a first axis by a directional etching method to form a first groove in the underlying layer;
• forming a resist pattern over the underlying layer, the resist pattern including a second opening only partially overlapping the first groove;
• and
• patterning the underlying layer by using the resist pattern as an etching mask to form a second groove.

A method for manufacturing a semiconductor device, the method comprising:

• forming a underlying conductive pattern in an dielectric layer over a substrate;
• forming a underlying layer over the underlying conductive pattern and the dielectric layer;
• forming a first opening in an underlying layer;
• expanding an upper portion of the first opening in a first axis by directional etching to form a first groove in an upper portion of the underlying layer;
• forming a resist pattern over the underlying layer, the resist pattern including a second opening partially overlapping the first groove;
• patterning the upper portion of the underlying layer by using the resist pattern as an etching mask to form a second groove;
• and
• filling a conductive material in the second groove and the lower portion of the first opening in an lower portion of the underlying layer to connect the underlying conductive pattern.