Low temperature steam free oxide gapfill
AssigneeApplied Materials, Inc.
InventorsJung Chan Lee, Praket P. Jha, Jingmei Liang, Shuchi Sunil Ojha
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Abstract
Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, UV cure for increasing film density, film conversion to silicon oxide at low temperature, and film densification by low temperature inductively coupled plasma (ICP) treatment (<400° C.).
Claims20
A processing method comprising:
- forming a film on a substrate surface by exposing the substrate surface to a precursor mixture, the precursor mixture comprising one or more of a silane, trisilylamine (TSA), and a reactant gas;
- exposing the film to a remote plasma source to deposit a flowable polysilazane film;
- curing the flowable polysilazane film;
- converting the flowable polysilazane film to a silicon oxide film;
- and
- densifying the silicon oxide film.
A processing method comprising:
- forming a plurality of film stacks on a substrate, the film stack comprising alternating layers of silicon germanium (SiGe) and silicon (Si);
- etching the film stack to form an opening extending a depth from a top surface of the film stack to a bottom surface, the opening having a width defined by a first sidewall and a second sidewall;
- depositing a film on the top surface of the film stack, and on the first sidewall, the second sidewall, and the bottom surface of the opening;
- exposing the film to a remote plasma source to deposit a flowable polysilazane film;
- curing the flowable polysilazane film;
- converting the flowable polysilazane film to a silicon oxide film;
- and
- densifying the silicon oxide film.
A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
- expose a substrate surface to a precursor mixture to form a film on the substrate surface;
- expose the film to a remote plasma source to deposit a flowable polysilazane film;
- cure the flowable polysilazane film;
- convert the flowable polysilazane film to a silicon oxide film;
- and
- densify the silicon oxide film.
Dependencies are inferred from the claim text.