Method of forming semiconductor device including distributed write driving arrangement

A method of fabricating a distributed write driving arrangement for a semiconductor memory device, the method comprising:

• forming bit cells in a first device layer;
• forming a local write driver;
• forming a local write bit (LWB) line in a first metallization layer over the first device layer;
• forming a local write bit_bar (LWB_bar) line in the first metallization layer;
• connecting each of the bit cells correspondingly between the LWB and LWB_bar lines;
• connecting the local write driver to the LWB line and the LWB_bar line;
• forming a global write bit (GWB) line in a second metallization layer over the first metallization layer;
• connecting the GWB line to the LWB line;
• forming a global write bit_bar (GWBL_bar) line in the second metallization layer;
• connecting the GWB line to the LWB line;
• connecting the GWBL_bar line to the LWB_bar line;
• forming a global write driver;
• and
• connecting the global write driver to the GWB line and the GWBL_bar line;
• and
• wherein:
• the forming a local write driver includes:
• forming a first equalizer circuit;
• connecting the first equalizer circuit between the LWB line and the LWB_bar line;
• and
• configuring the first equalizer circuit to be controlled by signals correspondingly on the GWB line and the GWB_bar line;
• and
• the forming a global write driver includes:
• forming a second equalizer circuit;
• and
• configuring the second equalizer circuit in a driver-coupling arrangement between the LWB line and the LWB_bar line;
• and
• configuring the second equalizer circuit in a control-coupling arrangement with respect to signals correspondingly on the GWB line and the GWB_bar line.

A method of fabricating a distributed write driving arrangement for a semiconductor memory device, the method comprising:

• forming bit cells in a first device layer, the bit cells being arranged in a column of segments, each segment including corresponding ones of the bit cells;
• forming a local write driver in the first device layer, the forming a local write driver including:
• locating each local write driver at an interior location in the corresponding segment;
• forming a local write bit (LWB) line in a first metallization layer over the first device layer;
• forming a local write bit_bar (LWB_bar) line in the first metallization layer;
• connecting each of the bit cells correspondingly between the LWB and LWB_bar lines;
• connecting the local write driver to the LWB line and the LWB_bar line;
• forming a global write bit (GWB) line in a second metallization layer over the first metallization layer;
• connecting the GWB line to the LWB line;
• forming a global write bit_bar (GWBL_bar) line in the second metallization layer;
• connecting the GWB line to the LWB line;
• connecting the GWBL_bar line to the LWB_bar line;
• forming a global write driver in a second device layer;
• and
• connecting the global write driver to the GWB line and the GWBL_bar line.