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US 2021/0280431 A1Published application
Pattern formation method and semiconductor device manufacturing method
AssigneeKioxia Corporation
InventorYusuke KASAHARA
Life of this patent
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Abstract
In a pattern formation method, a first organic film is formed on a film to be etched and contains a metal. A second organic film is formed on the first organic film, and has a higher density than a density of the first organic film. The first and second organic films are patterned to form a mask, and the film to be etched is etched using the mask.
Claims17
A pattern formation method comprising:
- forming a first organic film on a film to be etched;
- forming a second organic film on the first organic film, the second organic film having a higher density than a density of the first organic film;
- patterning the second organic film and the first organic film to form a mask having an opening with a sidewall, the first organic film having an inner side surface exposed at the sidewall;
- causing a metal to be infiltrated into the first organic film from the inner side surface;
- and
- forming a recess portion in the film to be etched using the mask.
3 more elements
A semiconductor device manufacturing method, comprising:
- forming a film to be etched on a semiconductor substrate;
- forming a first organic film on the film to be etched;
- forming a second organic film on the first organic film, the second organic film having a higher density than a density of the first organic film;
- patterning the second organic film and the first organic film to form a mask having an opening with a sidewall, the first organic film having an inner side surface exposed at the sidewall;
- causing a metal to be infiltrated into the first organic film from the inner side surface;
- and
- etching the film to be etched using the mask, thereby forming a recess portion in the film to be etched.
4 more elements
Dependencies are inferred from the claim text.