Substrate processing system and substrate processing method

Abstract

A substrate processing system configured to process a substrate includes an etching apparatus configured to etch the substrate; and a control device configured to control the etching apparatus. The etching apparatus includes a liquid supply nozzle configured to supply a processing liquid onto the substrate; a thickness measurement device provided as one body with the liquid supply nozzle, and configured to measure a thickness of the substrate without being in contact with the substrate; and a moving mechanism configured to move the liquid supply nozzle and the thickness measurement device in a horizontal direction. The control device controls the liquid supply nozzle, the thickness measurement device and the moving mechanism such that the thickness of the substrate is measured by the thickness measurement device while the liquid supply nozzle and the thickness measurement device are being moved in the horizontal direction.

Dependencies are inferred from the claim text.